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TH58BVG3S0HBAI6 Dataheets PDF



Part Number TH58BVG3S0HBAI6
Manufacturers Toshiba
Logo Toshiba
Description 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
Datasheet TH58BVG3S0HBAI6 DatasheetTH58BVG3S0HBAI6 Datasheet (PDF)

TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase o.

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DS-G160128STBWW TH58BVG3S0HBAI6 TC58BVG2S0HBAI6


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