11NM60-U2

UNISONIC TECHNOLOGIES CO., LTD 11NM60-U2 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.5Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM60L-TA3-T 11NM60G-TA3-T 11NM60L-TF3-T 11NM60G-TF3-T 11NM60L-TF1-T 11NM60G-TF1-T 11NM60L-TM3-T 11NM60G-TM3-T 11NM60L-TN3-R 11NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-342.D 11NM60-U2  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-342.D 11NM60-U2 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Drain Current Avalanche Energy Continuous Pulsed (Note 2) Single Pulsed (Note 3) VGSS ID IDM EAS ±30 11 33 425 V A A mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 18 V/n...