Document
NIKO-SEM
N- & P-Channel Enhancement Mode
P5806NPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS RDS(ON)
N-Channel 60 58mΩ P-Channel -60 90mΩ
ID 4.5A -3.5A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range
TA = 25 °C TA = 70 °C
TA = 25 °C TA = 70 °C
VDS VGS ID IDM PD Tj, Tstg
N-Channel P-Channel UNITS
60 -60 V
±20 ±20 V
4.5 -3.5
4 -3 A 20 -20
2 W
1.28
-55 to 150
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 62.5 40
UNITS °C / W °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS.