BC317

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package EBC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 45 50 6.0 150 350 2.8 1.0 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCES IC=100µA, VBE=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 E...