PRELIMINARY
Silicon Carbide
SJEP120R063
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge
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