ASJD1200R085

ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside Hermetic TO-258 Packaging 200°C Maximum Operating Temperature (260oC Contact Factory) Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions Inherent Radiation Tolerance >100K TID Positive Temperature Coefficient for Ease of Paralleling Extremely Fast Switching with No “Tail” Current at 150°C 1200 Volt Drain-Source Blocking Voltage RDS(on)max of 0.085  Voltage Controlled 4 Low Gate Charge Low Intrinsic Capacitance ProductSummary BVDS 1200 RDS(ON)max 0.085 ETS,typ TBD V : μJ D (2,4) G (1) APPLICATIONS: Satellite Solar Inverters Mil Spec Power Supplies TO-258 - Switch Mode - Uninterrupted Jet Engine Electronics Down-hole Electronics (Motor / Compressor Control) 123 S (3) Internal Schematic Non-isolated tab version shown. For isolated...