Silicon Carbide
SDP20S120D
Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease o...
Silicon Carbide
SDP20S120D
Silicon Carbide Power
Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
4
TO-247
3 2 1
Product Summary
VDC 1200
V
IF 20 A
Qc 80 nC
K(4)
A(1)
A(3)
K(2)
Internal Schematic
MAXIMUM RATINGS
Parameter
Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg / Per Device)
Peak Repetitive Forward Current
Symbol VRRM VDC IF
IFRM
Conditions Tj = 25 °C
TC < 145 °C TC < 100 °C TC = 125 °C, D = 0.1
Non-Repetitive Forward Surge Current (Per Leg / Per Device)
IFSM
Power Dissipation (Per Leg / Per Device)
PTOT
Operating and Storage Temperature Tj, Tstg
TC = 25 °C, tP = 10 ms TC = 25 °C, tP = 10 us
TC = 25 °C
SDP20S120D Rev 1.4
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