MBRF2545CTG

Switch-mode Schottky Power Rectifier MBRF2545CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated No Isolation Hardware Required These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds www.onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 45 VOLTS 1 2 3 MARKING DIAGRAM 1 2 3 TO−220 FULLPAKt CASE 221D AYWW B2545G AKA A = Assembly Location Y = Year WW = Work Week B2545 = Device Code G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MBRF2545CTG TO−220 (Pb−Free) 50 Units/Rail © Semiconductor Components Industries, LLC, 2016 1 Ju...