Document
NIKO-SEM
Dual N-Channel Enhancement Mode
P5506HPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 63mΩ
ID 4A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range
TC = 25 °C TC = 70 °C
TC = 25 °C TC = 70 °C
VDS VGS ID IDM PD Tj, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
LIMITS 60 ±20 4 2.5 30 1.7 0.6
-55 to 150
UNITS V V
A
W °C
MAXIMUM 72
UNITS °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
Zero Gate Voltage Drai.