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P5506HPG Dataheets PDF



Part Number P5506HPG
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description Dual N-Channel MOSFET
Datasheet P5506HPG DatasheetP5506HPG Datasheet (PDF)

NIKO-SEM Dual N-Channel Enhancement Mode P5506HPG Field Effect Transistor DIP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 63mΩ ID 4A D1 D1 D2 D2 #1S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC .

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NIKO-SEM Dual N-Channel Enhancement Mode P5506HPG Field Effect Transistor DIP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 63mΩ ID 4A D1 D1 D2 D2 #1S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C VDS VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. TYPICAL LIMITS 60 ±20 4 2.5 30 1.7 0.6 -55 to 150 UNITS V V A W °C MAXIMUM 72 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drai.


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