P1060ETFS

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.77Ω @VGS = 10V ID 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 10 6 30 3.5 Avalanche Energy3 EAS 61 Power Dissipation TC= 25 °C TC= 100°C PD 39 15 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 100V , L = 10mH, starting TJ = 25˚C SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 3.2 UNITS °C / W REV 1.0 1 2015/9/25 P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 2...