N-Channel MOSFET
P0760ZTF / P0760ZTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
640mΩ @VGS = 10V
ID 7...
Description
P0760ZTF / P0760ZTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
640mΩ @VGS = 10V
ID 7A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM IAS EAS
7 4.4 16 2 80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
32 12
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 10mH, starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.9 62.5
UNITS °C / W
REV 1.0
1 2017/1/23
P0760ZTF / P0760ZTFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTER...
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