P0660ETFS

P0660ETF / P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.3Ω @VGS = 10V ID 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 6 3.8 20 3.5 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 32 13 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.8 62.5 UNITS °C / W REV 1.0 1 2017/1/23 P0660ETF / P0660ETFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACT...