N-Channel MOSFET
P3710BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID 31A
TO-220
AB...
Description
P3710BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID 31A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
31 20 75
Avalanche Current Avalanche Energy2
IAS 16 EAS 128
Power Dissipation
TC = 25 °C TC = 100 °C
PD
78 21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 °C,L= 1mH,VDD= 50V
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 1.6 °C / W
REV 1.0
1 2017/1/16
P3710BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Vo...
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