G4812SS

DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:  Low RDS(ON) - minimizes conduction losses  Low VSD - reducing the losses due to body diode conduction  Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses  Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-through or cross conduction currents at high frequencies  Avalanche rugged – IAR and EAR rated  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. ...