P0920AT

P0920AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 0.42Ω @VGS = 10V ID 9A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1, 2 TC = 25 °C TC = 100 °C ID IDM 9 5.8 36 Avalanche Current IAS 9 Avalanche Energy L = 2.8mH EAS 112 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.5 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P0920AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown ...