P0806AT

P0806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 8.5mΩ @VGS = 10V ID 82A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±25 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 0.1mH ID IDM IAS EAS 82 52 246 64 203 Power Dissipation TC = 25 °C TC = 100 °C PD 113 45 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.1 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P0806AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITION...