P0910A

P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 80 50 250 Avalanche Current IAS 72 Avalanche Energy L = 0.3mH EAS 797 Power Dissipation TC = 25 °C TC = 100 °C PD 125 50 Operating Junction & Storage Temperature Range Lead Temperature(1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1 62.5 UNITS °C / W Ver 1.0 1 2013/8/8 P0910AS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (Tc = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX S...