P3004ND5G

P3004ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V -40V 55mΩ @VGS = -10V ID 12A -8.8A Channel N P TO-252- 5 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS Drain-Source Voltage Gate-Source Voltage N 40 VDS P -40 N ±20 VGS P ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C N 12 P -8.8 ID N 8 P -5.8 N 50 IDM P -50 A Avalanche Current N 19 IAS P -18 Avalanche Energy L = 0.1mH N 20 EAS P 19 mJ Power Dissipation TC = 25 °C TC = 70 °C N3 P3 PD N 2.1 P 2.1 W Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 °C Ver 1.0 1 2012/4/12 P3004ND5G N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junct...