P1504BDG

P1504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 15mΩ @VGS = 10V ID 40A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 40 25 85 Avalanche Current IAS 22 Avalanche Energy L = 0.3mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 42 17 Operating Junction & Storage Temperature Range Lead Temperature(1/16” from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.1 1 2013-3-20 P1504BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CO...