P1402CDG

P1402CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 14mΩ @VGS = 4.5V ID 45A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 45 19 140 Avalanche Current IAS 33 Avalanche Energy L = 0.1mH EAS 52 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 175 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1% SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.6 110 UNITS °C / W Rev 1.2 1 2015/5/28 P1402CDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltag...