P0770EIS

P0770EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 1.5Ω @VGS = 10V ID 7A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 7 4.4 20 2.2 Avalanche Energy3 EAS 24 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH ,starting TJ = 25˚C SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.3 62.5 UNITS °C / W REV 1.0 1 2015/10/19 P0770EIS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted...