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P0465CIS Dataheets PDF



Part Number P0465CIS
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0465CIS DatasheetP0465CIS Datasheet (PDF)

P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6Ω @VGS = 10V ID 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy3 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 54 21 Operating Junctio.

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P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6Ω @VGS = 10V ID 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy3 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 54 21 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.3 62.5 UNITS °C / W REV 1.1 1 2015/7/31 P0465CIS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Note.


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