Download P4404EI Datasheet
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P4404EI
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
44mΩ @VGS = -10V
ID -24A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
ID IDM
-24 -19 -80
Avalanche Current Avalanche Energy2
L = 0.1mH
IAS EAS
-27 38
Power Dissipation
TC = 25 °C TC = 70 °C
PD
42 30
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V . Starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3 75
UNITS °C / W
REV 1.0
1 2014/8/15
P4404EI
P-Cha.
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