P0165EI

P0165EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 10.6Ω @VGS = 10V ID 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 1 0.7 1.8 0.5 1.25 Power Dissipation TC = 25 °C TC = 100 °C PD 37 15 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH ,starting TJ = 25˚C SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.4 62.5 UNITS °C / W REV 1.0 1 2016/1/15 P0165EI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) ...