PK626HY

PK626HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.4mΩ @VGS = 10V 30V 7mΩ @VGS = 10V ID CH. 99A Q2 43A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 99 43 63 27 Pulsed Drain Current1 Q2 IDM Q1 120 55 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 25 11 20 9.5 Avalanche Current Q2 IAS Q1 48 23 Avalanche Energy L = 0.1mH Q2 EAS Q1 115 26.4 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 43 24 17 9.6 REV 1.0 1 UNITS V A mJ W 2017/1/5 PK626HY Dual N-Channel Enhancement Mode MOSFET Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG Q2 2.7 Q1 1.7 Q2 1.7 Q1 1.1 -55 to 150 W °C THERMAL RESISTANCE RATINGS THERMAL RESIST...