PK555BA

PK555BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 28mΩ @VGS = -10V ID -19A PDFN 5x6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 TC = 25 °C -19 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -12 -7.8 -6.2 -50 -19.3 Avalanche Energy L = 0.1mH EAS 18.6 TC = 25 °C 19 Power Dissipation3 TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 7.9 3.1 2 -55 to 150 UNITS V A mJ W °C REV1.0 1 2016/12/30 PK555BA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 40 63 °C / W Junction-to-Case Steady-State RqJC 6.3 1Pulse width limited by maximum junction temperatu...