PK5G6EA

PK5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 2.4mΩ @VGS = 10V ID 87A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 87 55 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 31 25 Avalanche Current IAS 51 Avalanche Energy L = 0.1mH EAS 130 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 Power Dissipation3 TA = 25 °C TA = 70 °C PD 4 2.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 30 51 Junction-to-Case Steady-State RqJC 4 1Pulse width limited by maximum junction temperature...