MOSFET
PK512BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ @VGS = 10V
ID2 93A
PDFN 5*6P
...
Description
PK512BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ @VGS = 10V
ID2 93A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
93 ID
59 IDM 150
Continuous Drain Current
TA = 25 °C TA = 70 °C
22 ID 17
Avalanche Current
IAS 49
Avalanche Energy
L = 0.1mH
EAS 120
Power Dissipation
TC = 25 °C TC = 100 °C
44 PD 17
Power Dissipation
TA = 25 °C TA = 70 °C
2.5 PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
3
Junction-to-Ambient3
RqJA
50
1Pulse width limited by maximum junction temperature.
2Package limitation current is 52A
3The value of RqJA is measured with the device mounted on 1in2 FR-4 ...
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