Document
PK501BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7mΩ @VGS = -10V
ID -43A
PDFN 5x6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ±25
TC = 25 °C
-43
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C TA = 70 °C
ID
IDM IAS
-27 -13 -10 -110 -38
Avalanche Energy
L = 0.1mH
EAS
72
TC = 25 °C
25
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
10 2.2 1.4 -55 to 150
UNITS V
A
mJ W °C
REV1.0
1 2016/12/30
PK501BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
56
Junction-to-Case
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in.