P1210BK

P1210BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 40A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 40 26 110 Continuous Drain Current TA = 25 °C TA= 70 °C ID 12 9.4 Avalanche Current IAS 20 Avalanche Energy L = 1mH EAS 200 Power Dissipation TC = 25 °C TC = 100 °C PD 40 20 Power Dissipation3 TA = 25 °C TA = 70 °C PD 4.1 2.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 30 55 Junction-to-Case Steady-State RqJC 2.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured...