P1003BK

P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V ID 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C (Package Limited) TC = 25 °C(Silicon Limited) ID 30 49 Pulsed Drain Current1 TC = 100 °C 31 IDM 120 Continuous Drain Current TA = 25 °C TA = 70 °C 13 ID 10 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C TC = 100 °C 35 PD 14 Power Dissipation TA = 25 °C TA = 70 °C 2.5 PD 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Steady-State Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 3.5 °C / W 50 Ver 1.0 1 ...