P261AFEA

P261AFEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 20mΩ @VGS = -4.5V ID -32A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -12 VGS ±8 TC = 25 °C -32 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -20 -9 -7 -60 -36.7 Avalanche Energy L = 0.1mH EAS 67.5 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 12 2 1.3 -55 to 150 UNITS V A mJ W °C REV 1.2 1 2014/6/9 P261AFEA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 Steady-State RqJA 60 Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature. RqJC 4 2Package limitation current is...