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P6003QEA Dataheets PDF



Part Number P6003QEA
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P6003QEA DatasheetP6003QEA Datasheet (PDF)

P6003QEA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 24mΩ @VGS = 10V -30V 60mΩ @VGS = -10V ID 20A -12A Channel N P PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 TC = 25 °C N 20 P -12 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID N 13 P -8 N 7.3 P -4.3 TA = 70 °C N 5.8 P -3.4 Pulsed Drain Current1.

  P6003QEA   P6003QEA



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P6003QEA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 24mΩ @VGS = 10V -30V 60mΩ @VGS = -10V ID 20A -12A Channel N P PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 TC = 25 °C N 20 P -12 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID N 13 P -8 N 7.3 P -4.3 TA = 70 °C N 5.8 P -3.4 Pulsed Drain Current1 N 60 IDM P -30 Avalanche Current N 17.4 IAS P -18 Avalanche Energy L = 0.1mH N 15 EAS P 16.2 Power Dissipation TC = 25 °C TC = 100 °C PD N 16 P 15 N6 P6 Ver 1.0 1 UNITS V A mJ W 2012/4/3 P6003QEA N&P-Channel Enhancement Mode MOSFET PARAMETERS/TEST CONDITIONS Power Dissipation TA = 25 °C TA = 70 °C Junction & Storage Temperature Range SYMBOL CH. LIMITS N2 P 1.7 PD N 1.3 P 1.1 TJ, TSTG -55 to 150 UNITS W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE S.


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