P0603BEAD

P0603BEAD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 56A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 56 Continuous Drain Current1,2 TC = 100 °C TA = 25 °C ID 35 14.5 Pulsed Drain Current1 TA = 70 °C IDM 11.6 100 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 72 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12 2.1 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/6/18 P0603BEAD N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 Junction-to-Case RqJA RqJC 60 °C / W 3.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 27A. 3The value of RqJA is ...