P2003BE

P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 25 Continuous Drain Current TC = 100 °C TA = 25 °C ID 15 7 Pulsed Drain Current1 TA = 70 °C IDM 5.7 50 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 TC = 25 °C 21 Power Dissipation TC = 100 °C TA = 25 °C PD 8 1.7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/6/19 P2003BE N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM UNITS 75 °C / W 6 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL...