P1603BEBB

P1603BEBB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 24 15 8.2 6.6 70 20.5 Avalanche Energy L = 0.1 mH EAS 21 TC = 25 °C 15 Power Dissipation TC = 100 °C TA= 25 °C TA= 70°C Operating Junction & Storage Temperature Range PD Tj, Tstg 6.2 1.8 1.1 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA Junction-to-Case RqJC 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3Package limitation current is 18A. MAXIMUM 67 8 UNITS °C / W REV 1.1 1 2...