P5806NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 60V
RDS(ON) 65mΩ @VGS = 10V
-60V
120mΩ @VGS = -10V
ID 4.5A -3.5A
Channel N P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 60 VDS P -60
Gate-Source Voltage
N ±20 VGS P ±20
Continuous...
