N&P-Channel MOSFET
P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
45mΩ @VGS ...
Description
P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N 10 P -7 ID N 7 P -5
Pulsed Drain Current1
N 20 IDM
P -20
Power Dissipation
TA = 25 °C TA = 70 °C
N 2.5 P 2.5 PD N 1.6 P 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1%.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 50 30
UNITS °C / W °C / W
Ver 1.0
1 2013-4-18
P5003QVG
N&P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITION...
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