N-Channel MOSFET
P1406BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 12.5mΩ @VGS = 10V
ID 12A
SOP-8
ABS...
Description
P1406BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 12.5mΩ @VGS = 10V
ID 12A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
12 10 40
Avalanche Current
IAS 39
Avalanche Energy
L = 0.1mH
EAS
76
Power Dissipation3
TA= 25 °C TA =70 °C
PD
4 2.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t ≦10s
RqJA
30
Junction-to-Ambient
Steady-State
RqJA
56
Junction-to-Case
Steady-State
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based...
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