N&P-Channel MOSFET
P4404QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 30mΩ @VGS =10V
-40V
45mΩ @VGS = -...
Description
P4404QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 30mΩ @VGS =10V
-40V
45mΩ @VGS = -10V
ID Channel 7A N -5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P -40
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N7 P -5 ID N 6 P -4
Pulsed Drain Current1
N 25 IDM P -20
Avalanche Energy
L = 0.1mH
N 28 EAS P 31
Power Dissipation
TA = 25 °C TA = 70 °C
N 2
P PD N
1.3 P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.0
1 2014/9/29
P4404QVT
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJL RqJA
TYPICAL
MAXIMUM UNITS 31 °C / W 62.5
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST COND...
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