P6002OAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.5V
-20V
115mΩ @VGS = -4.5V
ID 3.4A -2.5A
Channel N P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
VDS
N 20 P -20
Gate-Source Voltage
N ±8 VGS P ±8
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