P4402FAG

P4402FAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 44mΩ @VGS = -4.5V ID -5A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4.2 -3.3 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.1 0.7 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient t≦5sec Junction-to-Ambient Steady State Junction-to-Lead Steady State 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. SYMBOL RqJA RqJA RqJL TYPICAL MAXIMUM 62.5 110 50 UNITS °C / W Ver 1.0 1 2012/4/12 P4402FAG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TY...