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P0550ED Dataheets PDF



Part Number P0550ED
Manufacturers UNIKC
Logo UNIKC
Description N-Channel Transistor
Datasheet P0550ED DatasheetP0550ED Datasheet (PDF)

P0550ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.55Ω @VGS = 10V ID 5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C TC = 100 °C PD 62.

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P0550ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.55Ω @VGS = 10V ID 5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2 62.5 UNITS °C / W REV 1.0 1 2015/4/29 P0550ED N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unles.


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