Document
NIKO-SEM
N-Channel Enhancement Mode
P2206BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ
ID 35A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 ° C TC = 100 ° C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 ° C TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS 60 ±20 35 22 100 26 33.8 62.5 25
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 2
62.5
UNITS °C /W
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS.