SGP02N60

Preliminary data SGP02N60 IGBT Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Type SGP02N60 VCE 600V IC 2A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 100 °C Avalanche energy, single pulse IC = 2 A, VCC = 50 V, RGE = 25 Ω L = 1.5 mH, Tj = 25 °C Power dissipation TC = 25 °C Package TO-220 AB Symbol VCE VCGR VGE IC ICpuls EAS Ptot Pin 1 G Pin 2 C Pin 3 E Ordering Code Q67040-A . . . . Values 600 600 ± 20 5.5 2 11 4 3 30 Unit V A mJ W Semiconductor Group 1 Apr-07-1998 Preliminary data Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, junction - case Symbol Tj Tstg - RthJC SGP02N60 Values -55 ... + 150 -55 ... + 150 55 / 150 / 56 Unit ...