R8005ANJ

R8005ANJ 　　Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S) 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TL Marking R8005ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±5 A Pulsed drain current IDP*2 ±10 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.5 A Avalanche energy, single pulse EAS*3 1.66 mJ Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 　 　 R8005ANJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.04 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta =...