R8001CND

R8001CND 　　Nch 800V 1A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 8.7Ω ±1A 36W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant lOutline TO-252 SC-63 CPT3 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking R8001C lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±1 A Pulsed drain current IDP*2 ±4 A Gate - Source voltage VGSS ±25 V Avalanche current, single pulse IAS*3 0.5 A Avalanche energy, single pulse EAS*3 0.066 mJ Power dissipation (Tc = 25°C) PD 36 W Junction temperature Tj 150 ℃ Operating junction and storage temperatur...