R6047MNZ

R6047MNZ 　　Nch 600V 47A Power MOSFET 　　 Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline 　 RDS(on)(Max.) 0.081Ω ID ±47A TO-3PF PD 102W 　 　　　　　　 lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 360 Taping code C8 Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6047MNZ Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±47 A Pulsed drain current IDP*2 ±141 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS 7.0 A Avalanche energy, single pulse EAS 13.35 mJ Power dissipation (Tc = 25°C) PD 102 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170605 - Rev.003 　 　 NotNeRewcDoemsimgennsded for R6047MNZ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　...