R6008MND3

R6008MND3 　　Nch 600V 8A Power MOSFET 　　 Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline 　 RDS(on)(Max.) 0.610Ω ID ±8A TO-252 PD 115W 　 　　　　　　 lFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6008M Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±8 A Pulsed drain current IDP*2 ±24 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS 1.25 A Avalanche energy, single pulse EAS*3 0.42 mJ Power dissipation (Tc = 25°C) PD*4 115 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170605 - Rev.002 　 　 NotNeRewcDoemsimgennsded for R6008MND3 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datashe...