Document
CD4070BMS CD4077BMS
December 1992
CMOS Quad Exclusive OR and Exclusive NOR Gates
Pinouts
A 1 B 2
Features
• High Voltage Types (20V Rating) • CD4070BMS - Quad Exclusive OR Gate • CD4077BMS - Quad Exclusive NOR Gate • Medium Speed Operation - tPHL, tPLH = 65ns (Typ.) at VDD = 10V, CL = 50pF • 5V, 10V and 15V Parametric Ratings • Standardized, Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”
CD4070BMS TOP VIEW
14 VDD 13 H 12 G 11 M = G⊕H 10 L = E⊕F 9 F 8 E
J = A⊕B 3 K = C⊕D 4 C 5 D 6 VSS 7
CD4077BMS TOP VIEW
A 1 B 2 J = A⊕B 3 K = C⊕D 4 C 5 D 6 VSS 7 14 VDD 13 H 12 G 11 M = G⊕H 10 L = E⊕F 9 F 8 E
Applications
• Logical Comparators • Parity Generators and Checkers • Adders/Subtractors
Functional Diagram
A J = A⊕B K = C⊕D M = G⊕H L = E⊕F VSS = 7 VDD = 14 B C D E F G H 1 2 5 6 8 9 12 13 10 4 3 J
K
Description
CD4070BMS contains four independent Exclusive OR gates. The CD4077BMS contains four independent Exclusive NOR gates. The CD4070BMS and CD4077BMS provide the system designer with a means for direct implementation of the Exclusive OR and Exclusive NOR functions, respectively. The CD4070BMS and CD4077BMS are supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack *CD4070B Only H4Q H1B *H4F †H3W
L
11
M
CD4070BMS
A B J = A⊕B K = C⊕D M = G⊕H L = E⊕F C D E F G H 1 2 5 6 8 9 12 13 10 4 3
J
K
†CD4077B Only
L
11
M
CD4077BMS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3322
7-455
Specifications CD4070BMS, CD4077BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25
oC
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 -
MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8
UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
+125oC -55oC +25o C
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -5.